NP0G3D2 Panasonic Semiconductor, NP0G3D2 Datasheet - Page 4

• Manufacturer Part Number: NP0G3D2
• Description: Silicon PNP(NPN) epitaxial planar transistor
• Manufacturer: Panasonic Semiconductor

NP0G3D2
4
Characteristics charts of Tr2
90
80
70
60
50
40
30
20
10
10
0
1
0
Collector to emitter voltage V
0
I
Collector to base voltage V
B
= 1.0 mA 0.9 mA
2
10
C
I
4
C
ob
0.8 mA 0.7 mA
 V
 V
0.5 mA
20
6
CE
CB
8
f = 1 MHz
T
T
30
a
0.6 mA
a
= 25°C
= 25°C
CB
10
CE
0.4 mA
0.3 mA
0.2 mA
( V )
( V )
12
40
0.01
100
0.1
0.1
10
1
1
−1
0
Collector current I
0.5
SJH00051AED
Input voltage V
V
25°C
I
CE(sat)
O
1.0
T
 V
a
−10
= 125°C
 I
1.5
IN
IN
−25°C
C
C
V
T
I
a
C
O
( V )
( mA )
= 25°C
/ I
= 5 V
2.0
B
= 10
−100
2.5
200
180
160
140
120
100
0.1
80
60
40
20
10
0
1
1
1
V
T
V
a
O
CE
= 25°C
= 0.2 V
Collector current I
= 10 V
Output current I
V
h
FE
IN
 I
 I
10
10
25°C
T
a
C
O
= 125°C
O
C
( mA )
( mA )
−25°C
100
100