PBSS3540E Philips Semiconductors, PBSS3540E Datasheet
PBSS3540E
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PBSS3540E Summary of contents
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... PBSS3540E 40 V, 500 mA PNP low V Rev. 01 — 3 May 2005 1. Product profile 1.1 General description PNP low V plastic package. NPN complement: PBSS2540E. 1.2 Features Low collector-emitter saturation voltage V High collector current capability: I High collector current gain (h High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1 ...
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... Ordering information Package Name Description SC-75 plastic surface mounted package; 3 leads Marking codes Marking code 1T Rev. 01 — 3 May 2005 PBSS3540E 40 V, 500 mA PNP low V CEsat Simplified outline Symbol © Koninklijke Philips Electronics N.V. 2005. All rights reserved. (BISS) transistor 3 1 ...
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... T amb junction temperature ambient temperature storage temperature 300 P tot (mW) (1) 200 (2) 100 Rev. 01 — 3 May 2005 PBSS3540E (BISS) transistor CEsat Min Max - - - - - - [ 150 [2] - 250 - 150 65 +150 ...
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... Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 9397 750 15062 Product data sheet Thermal characteristics Parameter thermal resistance from junction to ambient Rev. 01 — 3 May 2005 PBSS3540E 40 V, 500 mA PNP low V CEsat Conditions Min Typ [1] in free air - - [ ...
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... 500 mA 100 100 mA 100 MHz MHz Rev. 01 — 3 May 2005 PBSS3540E (BISS) transistor CEsat Min Typ Max - - 100 - - 100 200 - - [1] 150 - - [ ...
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... I (mA amb ( ( ( Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values Rev. 01 — 3 May 2005 PBSS3540E (BISS) transistor CEsat 006aaa389 (1) (2) ( (mA 100 C 006aaa391 (1) (2) ...
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... T Fig 8. Collector-emitter saturation resistance as a 006aaa394 R CEsat ( ) (V) CE (1) I (2) I (3) I Fig 10. Collector-emitter saturation resistance as a Rev. 01 — 3 May 2005 PBSS3540E 40 V, 500 mA PNP low V CEsat 100 C amb ...
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... Dimensions in mm Description 4 mm pitch tape and reel Section 2.20 0.60 1.10 0. 2.00 0.85 1 0.60 (3x) 1.90 Reflow soldering is the only recommended soldering method. Dimensions in mm. Rev. 01 — 3 May 2005 PBSS3540E 40 V, 500 mA PNP low V CEsat 0.95 0.60 3 0.45 0.15 2 0.30 0.25 0.15 0.10 1 04-11-04 [1] Packing quantity 3000 10000 -115 -135 16. solder lands solder resist 1 ...
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... Product data sheet 40 V, 500 mA PNP low V Data sheet status Change notice Product data sheet - Rev. 01 — 3 May 2005 PBSS3540E (BISS) transistor CEsat Doc. number Supersedes 9397 750 15062 - © Koninklijke Philips Electronics N.V. 2005. All rights reserved ...
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... Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 3 May 2005 PBSS3540E (BISS) transistor CEsat © Koninklijke Philips Electronics N.V. 2005. All rights reserved ...
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... Disclaimers Trademarks Contact information . . . . . . . . . . . . . . . . . . . . 10 PBSS3540E 40 V, 500 mA PNP low V © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice ...