PBSS3540E Philips Semiconductors, PBSS3540E Datasheet - Page 6
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PBSS3540E
Manufacturer Part Number
PBSS3540E
Description
PNP low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet
1.PBSS3540E.pdf
(11 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PBSS3540E
Manufacturer:
MXIC
Quantity:
1 000
Philips Semiconductors
9397 750 15062
Product data sheet
Fig 3. DC current gain as a function of collector
Fig 5. Collector-emitter saturation voltage as a
V
(mV)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
h
CEsat
10
10
FE
600
400
200
0
1
1
2
V
current; typical values
function of collector current; typical values
10
10
I
C
amb
amb
amb
amb
amb
amb
CE
/I
1
1
B
= 2 V
= 100 C
= 25 C
= 55 C
= 100 C
= 25 C
= 55 C
= 20
1
1
(1)
(2)
(3)
10
10
(1)
(2)
(3)
10
10
2
2
I
I
006aaa388
006aaa390
C
C
(mA)
(mA)
10
10
Rev. 01 — 3 May 2005
3
3
Fig 4. Base-emitter voltage as a function of collector
Fig 6. Collector-emitter saturation voltage as a
V
(mV)
(mV)
(1) T
(2) T
(3) T
(1) I
(2) I
(3) I
V
CEsat
1100
10
10
BE
900
700
500
300
100
40 V, 500 mA PNP low V
1
1
2
10
V
current; typical values
10
T
function of collector current; typical values
C
C
C
amb
amb
amb
amb
CE
/I
/I
/I
B
B
B
1
1
= 2 V
= 100
= 50
= 10
= 55 C
= 25 C
= 100 C
= 25 C
1
1
(1)
(2)
(3)
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
10
10
(1)
(2)
(3)
PBSS3540E
CEsat
10
10
2
2
(BISS) transistor
I
I
006aaa389
C
006aaa391
C
(mA)
(mA)
10
10
3
3
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