PBSS3540E Philips Semiconductors, PBSS3540E Datasheet - Page 7

• Manufacturer Part Number: PBSS3540E
• Description: PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
9397 750 15062
Product data sheet
Fig 7. Base-emitter saturation voltage as a function of
Fig 9. Collector current as a function of
V
(1) T
(2) T
(3) T
BEsat
(V)
(A)
I
C
1.1
0.9
0.7
0.5
0.3
0.1
0.8
0.6
0.4
0.2
1
0
I
collector current; typical values
T
collector-emitter voltage; typical values
10
C
0
amb
amb
amb
amb
/I
I
B
B
1
(mA) = 30
= 20
= 55 C
= 25 C
= 100 C
= 25 C
1
27
24
21
18
1
2
10
(1)
(2)
(3)
3
10
15
12
9
6
3
2
4
I
006aaa392
006aaa394
C
V
CE
(mA)
(V)
10
5
Rev. 01 — 3 May 2005
3
Fig 8. Collector-emitter saturation resistance as a
Fig 10. Collector-emitter saturation resistance as a
R
R
(1) T
(2) T
(3) T
(1) I
(2) I
(3) I
CEsat
CEsat
( )
( )
10
10
10
10
10
10
40 V, 500 mA PNP low V
10
10
1
1
3
2
1
3
2
1
10
I
function of collector current; typical values
10
T
function of collector current; typical values
C
C
C
C
amb
amb
amb
amb
/I
/I
/I
/I
B
B
B
B
1
1
= 20
= 100
= 50
= 10
= 100 C
= 25 C
= 55 C
= 25 C
1
1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
10
10
PBSS3540E
CEsat
10
10
(1)
(2)
(3)
(1)
(2)
(3)
2
2
(BISS) transistor
I
I
006aaa393
C
006aaa395
C
(mA)
(mA)
10
10
3
3
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