PBSS3540E Philips Semiconductors, PBSS3540E Datasheet - Page 4

• Manufacturer Part Number: PBSS3540E
• Description: PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
6. Thermal characteristics
9397 750 15062
Product data sheet
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
FR4 PCB, mounting pad for collector 1 cm
duty cycle =
5
1
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
0.75
10
4
Table 6:
[1]
[2]
Symbol
R
th(j-a)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
10
Parameter
thermal resistance from
junction to ambient
Thermal characteristics
3
2
10
2
Rev. 01 — 3 May 2005
10
1
Conditions
in free air
40 V, 500 mA PNP low V
1
10
[1]
[2]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Min
-
-
PBSS3540E
CEsat
10
Typ
-
-
2
(BISS) transistor
t
p
006aaa413
(s)
Max
833
500
10
3
2
.
Unit
K/W
K/W
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