PBSS4220V Philips Semiconductors, PBSS4220V Datasheet - Page 4

• Manufacturer Part Number: PBSS4220V
• Description: 2A NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

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6. Thermal characteristics
PBSS4220V_1
Product data sheet
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
Z
(K/W)
th(j-a)
10
10
10
10
1
3
2
1
10
FR4 PCB, standard footprint
duty cycle =
5
1
0.5
0.2
0.1
0.05
0.02
0.01
0
0.75
0.33
10
4
Table 6:
[1]
[2]
[3]
[4]
Symbol
R
R
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a ceramic PCB, Al
Reflow soldering is the only recommended soldering method.
10
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Thermal characteristics
3
10
Rev. 01 — 6 February 2006
2
10
1
2
O
3
, standard footprint.
Conditions
in free air
1
20 V, 2 A NPN low V
[1] [4]
[2] [4]
[3] [4]
10
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
-
-
-
-
PBSS4220V
CEsat
10
Typ
-
-
-
-
2
(BISS) transistor
t
p
006aaa425
(s)
Max
410
250
140
80
10
3
2
.
Unit
K/W
K/W
K/W
K/W
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