PBSS4220V Philips Semiconductors, PBSS4220V Datasheet - Page 6
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PBSS4220V
Manufacturer Part Number
PBSS4220V
Description
2A NPN low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet
1.PBSS4220V.pdf
(13 pages)
www.DataSheet4U.com
Philips Semiconductors
PBSS4220V_1
Product data sheet
Fig 3. DC current gain as a function of collector
Fig 5. Collector-emitter saturation voltage as a
V
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
h
CEsat
(V)
1000
10
10
10
FE
800
600
400
200
0
1
1
2
3
10
10
V
current; typical values
I
function of collector current; typical values
C
amb
amb
amb
amb
amb
amb
CE
/I
1
1
B
= 2 V
= 20
= 100 C
= 25 C
= 55 C
= 100 C
= 25 C
= 55 C
1
1
(1)
(2)
(3)
10
10
10
10
2
(1)
(2)
(3)
2
10
10
006aaa662
3
006aaa664
3
I
I
C
C
(mA)
(mA)
Rev. 01 — 6 February 2006
10
10
4
4
Fig 4. Base-emitter voltage as a function of collector
Fig 6. Collector-emitter saturation voltage as a
V
V
(1) T
(2) T
(3) T
(1) I
(2) I
(3) I
CEsat
(V)
(V)
10
10
10
BE
1.0
0.8
0.6
0.4
0.2
1
10
1
2
3
10
V
current; typical values
T
function of collector current; typical values
C
C
C
amb
amb
amb
amb
CE
/I
/I
/I
1
1
B
B
B
20 V, 2 A NPN low V
= 5 V
= 100
= 50
= 10
= 55 C
= 25 C
= 100 C
= 25 C
1
1
(1)
(2)
(3)
10
10
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
(1)
(2)
(3)
10
10
PBSS4220V
2
2
CEsat
10
10
(BISS) transistor
006aaa663
006aaa665
3
3
I
I
C
C
(mA)
(mA)
10
10
4
4
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