PBSS4220V Philips Semiconductors, PBSS4220V Datasheet - Page 8
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PBSS4220V
Manufacturer Part Number
PBSS4220V
Description
2A NPN low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet
1.PBSS4220V.pdf
(13 pages)
www.DataSheet4U.com
Philips Semiconductors
8. Test information
PBSS4220V_1
Product data sheet
Fig 11. BISS transistor switching time definition
Fig 12. Test circuit for switching times
90 %
10 %
90 %
10 %
I
I
B
C
I
C
= 1 A; I
Bon
oscilloscope
t
d
= 50 mA; I
t
on
Rev. 01 — 6 February 2006
V
t
I
r
(probe)
450
Boff
= 50 mA; R1 = open; R2 = 45 ; R
R1
R2
R
B
V
BB
20 V, 2 A NPN low V
R
C
V
CC
DUT
V
o
mlb826
I
Bon
(probe)
450
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
I
t
(100 %)
Boff
s
B
= 145 ; R
t
off
oscilloscope
PBSS4220V
CEsat
C
input pulse
(idealized waveform)
output pulse
(idealized waveform)
= 10
(BISS) transistor
t
f
I
006aaa003
C
(100 %)
t
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