PBSS4220V Philips Semiconductors, PBSS4220V Datasheet - Page 7

• Manufacturer Part Number: PBSS4220V
• Description: 2A NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

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Philips Semiconductors
PBSS4220V_1
Product data sheet
Fig 7. Base-emitter saturation voltage as a function of
Fig 9. Collector current as a function of
V
(1) T
(2) T
(3) T
BEsat
(V)
(A)
I
C
1.2
1.0
0.8
0.6
0.4
0.2
2.0
1.6
1.2
0.8
0.4
0
10
I
collector current; typical values
T
collector-emitter voltage; typical values
C
0
amb
amb
amb
amb
/I
1
B
= 20
= 55 C
= 25 C
= 100 C
= 25 C
1
1
I
B
(mA) = 8.0
10
2
(1)
(2)
(3)
10
3
2
10
4
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3
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7.2
6.4
5.6
4.8
4.0
3.2
2.4
1.6
0.8
V
I
C
CE
(mA)
(V)
Rev. 01 — 6 February 2006
10
5
4
Fig 8. Collector-emitter saturation resistance as a
Fig 10. Collector-emitter saturation resistance as a
R
R
(1) T
(2) T
(3) T
(1) I
(2) I
(3) I
CEsat
CEsat
( )
( )
10
10
10
10
10
10
10
1
1
2
1
10
3
2
1
10
I
function of collector current; typical values
T
function of collector current; typical values
C
C
C
C
amb
amb
amb
amb
/I
/I
/I
/I
1
1
B
B
B
B
20 V, 2 A NPN low V
= 20
= 100
= 50
= 10
= 100 C
= 25 C
= 55 C
= 25 C
1
1
(1)
(2)
(3)
10
10
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
10
10
PBSS4220V
2
2
CEsat
10
10
(BISS) transistor
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3
3
I
I
(1)
(2)
(3)
C
C
(mA)
(mA)
10
10
4
4
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