PBSS4320X Philips Semiconductors, PBSS4320X Datasheet - Page 3

• Manufacturer Part Number: PBSS4320X
• Description: 20 V / 3 A NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm
4. Device mounted on a ceramic printed-circuit board 7 cm
2004 Nov 03
V
V
V
I
I
I
P
T
T
T
SYMBOL
C
CM
B
stg
j
amb
CBO
CEO
EBO
tot
20 V, 3 A
NPN low V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
ambient temperature
CEsat
PARAMETER
(BISS) transistor
open emitter
open base
open collector
note 4
limited by T
T
amb
note 1
note 2
note 3
note 4
3
25 C
2
, single-sided copper, tin-plated.
CONDITIONS
j(max)
65
65
MIN.
20
20
5
3
5
0.5
550
1
1.4
1.6
+150
150
+150
PBSS4320X
Product specification
MAX.
V
V
V
A
A
A
mW
W
W
W
C
C
C
UNIT
2
2
.
.