PBSS4320X Philips Semiconductors, PBSS4320X Datasheet - Page 9

• Manufacturer Part Number: PBSS4320X
• Description: 20 V / 3 A NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
2004 Nov 03
handbook, halfpage
20 V, 3 A
NPN low V
V BEsat
I
(1) T
(2) T
(3) T
Fig.10 Base-emitter saturation voltage as a
I
(1) T
Fig.12 Equivalent on-resistance as a function of
R
C
C
/I
CEsat
/I
(V)
( )
10
10
B
B
10
1.2
0.8
0.6
0.4
0.2
= 20.
= 20.
10
amb
amb
amb
amb
10
1
1
2
1
2
10
1
= 100 C.
= 55 C.
= 25 C.
= 100 C.
1
function of collector current; typical values.
collector current; typical values.
1
1
CEsat
(2) T
10
10
amb
(BISS) transistor
= 25 C.
10
10
(2)
(3)
(1)
2
2
(3) T
10
10
(1) (2)
(3)
3
3
I C (mA)
I
amb
C
MLE382
(mA)
mle380
= 55 C.
10
10
4
4
9
handbook, halfpage
handbook, halfpage
R CEsat
Fig.11 Equivalent on-resistance as a function of
T
(1) I
(2) I
(3) I
(4) I
Fig.13 Collector current as a function of
T
(1) I
amb
amb
( )
10
10
(A)
I C
10
10
B
B
B
B
= 25 C.
10
= 25 C.
C
10
5
4
3
2
1
0
1
/I
3
2
1
2
= 25 mA.
= 22.5 mA.
= 20 mA.
= 17.5 mA.
B
0
= 100.
1
collector current; typical values.
collector-emitter voltage; typical values.
0.4
1
(2) I
(5) I
(6) I
(7) I
(8) I
10
C
0.8
/I
B
B
B
B
(1)
(3)
(10)
B
(1)
(4)
(5)
(6)
(7)
(8)
(9)
(2)
(3)
= 15 mA.
= 12.5 mA.
= 10 mA.
= 7.5 mA.
= 50.
(2)
1.2
10
2
PBSS4320X
Product specification
(3) I
10
1.6
(9) I
(10) I
3
C
I C (mA)
V CE (V)
/I
B
B
B
MLE379
MLE378
= 10.
= 5 mA.
= 2.5 mA.
10
2
4