PBSS4320X Philips Semiconductors, PBSS4320X Datasheet - Page 5

• Manufacturer Part Number: PBSS4320X
• Description: 20 V / 3 A NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm
4. Device mounted on a ceramic printed-circuit board 7 cm
2004 Nov 03
R
R
SYMBOL
th(j-a)
th(j-s)
20 V, 3 A
NPN low V
Mounted on FR4 printed-circuit board; standard footprint.
(1)
(2)
(K/W)
Z
10
th
10
10
10
= 1.
= 0.75.
1
3
2
1
10
(10)
5
(1)
(3)
(5)
(6)
(7)
(8)
(9)
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
(2)
(4)
CEsat
(3)
(4)
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
10
4
= 0.5.
= 0.33.
(BISS) transistor
PARAMETER
10
(5)
(6)
3
= 0.2.
= 0.1.
10
2
(7)
(8)
= 0.05.
= 0.02.
10
5
2
1
, single-sided copper, tin-plated.
in free air
CONDITIONS
note 1
note 2
note 3
note 4
(9)
(10) = 0.
1
= 0.01.
10
VALUE
225
125
90
80
16
10
2
PBSS4320X
Product specification
t
p
006aaa243
(s)
10
UNIT
K/W
K/W
K/W
K/W
K/W
3
2
2
.
.