PBSS4420D Philips Semiconductors, PBSS4420D Datasheet

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PBSS4420D

Manufacturer Part Number
PBSS4420D
Description
NPN low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN low V
plastic package.
PNP complement: PBSS5420D.
Table 1:
[1]
[2]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS4420D
20 V, 4 A NPN low V
Rev. 01 — 21 April 2005
Very low collector-emitter saturation resistance
Ultra low collector-emitter saturation voltage
4 A continuous collector current
Up to 15 A peak current
High efficiency due to less heat generation
Power management functions
Charging circuits
DC-to-DC conversion
MOSFET gate driving
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
Pulse test: t
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter saturation
resistance
p
Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD
300 s;
0.02.
CEsat
(BISS) transistor
Conditions
open base
single pulse;
t
I
I
p
C
B
= 400 mA
= 4 A;
1 ms
2
O
[1]
[2]
3
, standard footprint.
Min
-
-
-
-
Product data sheet
Typ
-
-
-
50
Max
20
4
15
70
Unit
V
A
A
m

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PBSS4420D Summary of contents

Page 1

... PBSS4420D NPN low V Rev. 01 — 21 April 2005 1. Product profile 1.1 General description NPN low V plastic package. PNP complement: PBSS5420D. 1.2 Features Very low collector-emitter saturation resistance Ultra low collector-emitter saturation voltage 4 A continuous collector current peak current High efficiency due to less heat generation 1 ...

Page 2

... T amb Rev. 01 — 21 April 2005 PBSS4420D NPN low V CEsat Simplified outline Symbol Min - - - ...

Page 3

... O , standard footprint collector mounting pad 2 collector mounting pad Rev. 01 — 21 April 2005 PBSS4420D NPN low V (BISS) transistor CEsat Min Max - 150 65 +150 65 +150 10 % and pulse width t 10 ms. p 006aaa270 75 125 175 amb © ...

Page 4

... Product data sheet Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to solder point O , standard footprint Rev. 01 — 21 April 2005 PBSS4420D NPN low V (BISS) transistor CEsat Min Typ [ [ [ [ [2] [5] - ...

Page 5

... Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 9397 750 14028 Product data sheet Rev. 01 — 21 April 2005 PBSS4420D NPN low V (BISS) transistor CEsat 006aaa272 (s) p © Koninklijke Philips Electronics N.V. 2005. All rights reserved. ...

Page 6

... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 9397 750 14028 Product data sheet Rev. 01 — 21 April 2005 PBSS4420D NPN low V (BISS) transistor CEsat 006aaa273 (s) p © Koninklijke Philips Electronics N.V. 2005. All rights reserved. ...

Page 7

... Boff turn-on time storage time fall time turn-off time transition frequency 100 MHz collector capacitance MHz 300 s; 0.02. p Rev. 01 — 21 April 2005 PBSS4420D NPN low V CEsat Min Typ = ...

Page 8

... V CEsat ( (mA) C (1) I (2) I (3) I Fig 8. Collector-emitter saturation voltage as a Rev. 01 — 21 April 2005 PBSS4420D NPN low V (BISS) transistor CEsat (1) (2) ( amb = 25 C amb ...

Page 9

... Product data sheet 006aaa332 10 R CEsat ( ) (mA) C (1) I (2) I (3) I Fig 10. Collector-emitter saturation resistance as a Rev. 01 — 21 April 2005 PBSS4420D NPN low V (BISS) transistor CEsat 3 2 (1) ( amb /I ...

Page 10

... Product data sheet 006aaa334 (1) (2) R (3) (4) (5) (6) (7) (8) (9) (10) 1.2 1.6 2.0 V (V) CE (1) T (2) T (3) T Fig 12. Collector-emitter saturation resistance as a Rev. 01 — 21 April 2005 PBSS4420D NPN low V CEsat 2 10 CEsat ( ) 10 1 (1) ( ...

Page 11

... Product data sheet (probe) 450 0. 0.15 A Boff Rev. 01 — 21 April 2005 PBSS4420D NPN low V CEsat input pulse (idealized waveform) I (100 %) Bon I Boff output pulse (idealized waveform) I (100 %) off 006aaa003 V ...

Page 12

... scale 3.1 1.7 3.0 0.6 0.95 2.7 1.3 2.5 0.2 REFERENCES JEDEC JEITA SC-74 Rev. 01 — 21 April 2005 PBSS4420D NPN low V CEsat detail 0.33 0.2 0.2 0.1 0.23 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2005. All rights reserved. (BISS) transistor ...

Page 13

... T2: reverse taping 9397 750 14028 Product data sheet Packing methods Description SOT457 4 mm pitch tape and reel pitch tape and reel; T2 Rev. 01 — 21 April 2005 PBSS4420D NPN low V (BISS) transistor CEsat [1] Packing quantity 3000 [2] -115 [3] ...

Page 14

... Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 21 April 2005 PBSS4420D NPN low V (BISS) transistor CEsat Doc. number Supersedes 9397 750 14028 - © Koninklijke Philips Electronics N.V. 2005. All rights reserved. ...

Page 15

... Rev. 01 — 21 April 2005 PBSS4420D NPN low V (BISS) transistor CEsat © Koninklijke Philips Electronics N.V. 2005. All rights reserved. ...

Page 16

... Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 14 Disclaimers Contact information . . . . . . . . . . . . . . . . . . . . 15 PBSS4420D NPN low V © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice ...

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