PBSS4420D Philips Semiconductors, PBSS4420D Datasheet - Page 4

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PBSS4420D

Manufacturer Part Number
PBSS4420D
Description
NPN low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
6. Thermal characteristics
9397 750 14028
Product data sheet
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
(10)
Z
(K/W)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
th(j-a)
10
10
10
10
1
3
2
1
10
FR4 PCB; standard footprint
= 1
= 0.75
= 0.5
= 0.33
= 0.2
= 0.1
= 0.05
= 0.02
= 0.01
= 0
5
10
(10)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
4
Table 6:
[1]
[2]
[3]
[4]
[5]
Symbol
R
R
th(j-a)
th(j-sp)
Device mounted on a ceramic PCB, Al
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Operated under pulsed conditions: Duty cycle
10
Thermal characteristics
3
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
10
2
Rev. 01 — 21 April 2005
10
1
2
O
3
, standard footprint.
Conditions
in free air
10 % and pulse width t
1
20 V, 4 A NPN low V
[2] [5]
10
[2]
[3]
[4]
[1]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Min
-
-
-
-
-
-
p
PBSS4420D
10 ms.
CEsat
10
Typ
-
-
-
-
-
-
2
(BISS) transistor
t
p
006aaa271
(s)
Max
350
208
160
113
50
45
10
3
2
2
Unit
K/W
K/W
K/W
K/W
K/W
K/W
.
.
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