PBSS4420D Philips Semiconductors, PBSS4420D Datasheet - Page 3

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PBSS4420D

Manufacturer Part Number
PBSS4420D
Description
NPN low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
9397 750 14028
Product data sheet
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
Symbol
T
T
T
Fig 1. Power derating curves
j
amb
stg
Device mounted on a ceramic PCB, Al
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Operated under pulsed conditions: Duty cycle
(1) Ceramic PCB, Al
(2) FR4 PCB; 6 cm
(3) FR4 PCB; 1 cm
(4) FR4 PCB; standard footprint
Limiting values
Parameter
junction temperature
ambient temperature
storage temperature
(mW)
2
2
P
1600
1200
2
collector mounting pad
collector mounting pad
tot
O
800
400
Rev. 01 — 21 April 2005
3
0
, standard footprint
…continued
75
25
2
(1)
(2)
(3)
(4)
O
3
, standard footprint.
Conditions
25
10 % and pulse width t
20 V, 4 A NPN low V
75
125
T
006aaa270
amb
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
( C)
175
p
Min
-
PBSS4420D
65
65
10 ms.
CEsat
(BISS) transistor
Max
150
+150
+150
Unit
2
2
C
C
C
.
.
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