PBSS5130T NXP Semiconductors, PBSS5130T Datasheet - Page 2

• Manufacturer Part Number: PBSS5130T
• Description: 30V 1A PNP low VCEsat (BISS) transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
PNP low V
MARKING
Note
1. * = p : made in Hong Kong
2003 Dec 12
PBSS5130T
Low collector-emitter saturation voltage V
High collector current capability: I
Higher efficiency leading to less heat generation
Reduced printed-circuit board requirements
Cost effective alternative to MOSFETS in specific
applications.
Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
– Inductive load driver (e.g. relays,
30 V, 1 A
PNP low V
* = t : made in Malaysia
* = W : made in China.
and LEDs)
buzzers and motors).
TYPE NUMBER
CEsat
transistor in a SOT23 plastic package.
CEsat
(BISS) transistor
*3E
MARKING CODE
C
and I
CM
CEsat
(1)
2
QUICK REFERENCE DATA
PINNING
V
I
I
R
handbook, halfpage
SYMBOL
C
CRP
CEO
CEsat
Fig.1 Simplified outline (SOT23) and symbol.
Top view
PIN
collector-emitter voltage
collector current (DC)
repetitive peak collector
current
equivalent on-resistance
1
2
3
1
PARAMETER
3
base
emitter
collector
2
www.DataSheet4U.com
MAM256
Product specification
DESCRIPTION
PBSS5130T
1
220
MAX.
30
1
1.5
3
2
V
A
A
m
UNIT