PBSS5130T NXP Semiconductors, PBSS5130T Datasheet - Page 3

• Manufacturer Part Number: PBSS5130T
• Description: 30V 1A PNP low VCEsat (BISS) transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on an FR4 printed-circuit board, single sided-copper, tinplated, mounting pad for collector 1 cm
THERMAL CHARACTERISTICS
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated and standard footprint.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated and mounting pad for collector 1 cm
2003 Dec 12
PBSS5130T
V
V
V
I
I
I
P
T
T
T
R
SYMBOL
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
th j-a
30 V, 1 A
PNP low V
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to
ambient
CEsat
PARAMETER
PARAMETER
(BISS) transistor
NAME
plastic surface mounted package; 3 leads
open emitter
open base
open collector
T
in free air
amb
note 1
note 2
note 1
note 2
3
25 C
CONDITIONS
CONDITIONS
PACKAGE
DESCRIPTION
65
65
MIN.
VALUE
417
260
www.DataSheet4U.com
300
480
+150
150
+150
PBSS5130T
Product specification
30
30
5
1
3
300
MAX.
VERSION
UNIT
K/W
K/W
V
V
V
A
A
mA
mW
mW
SOT23
C
C
C
UNIT
2
.
2
.