PBSS5130T NXP Semiconductors, PBSS5130T Datasheet - Page 4

• Manufacturer Part Number: PBSS5130T
• Description: 30V 1A PNP low VCEsat (BISS) transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2003 Dec 12
I
I
h
V
R
V
f
C
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEon
CEsat
c
30 V, 1 A
PNP low V
= 25 C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
equivalent on-resistance
base-emitter turn-on voltage
transition frequency
collector capacitance
p
CEsat
300 s;
PARAMETER
(BISS) transistor
0.02.
V
V
V
V
V
V
I
I
V
I
f = 100 MHz
V
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CB
= 100 mA; I
= 1 A; I
= 500 mA; I
= 100 mA; V
= 4 V; I
= 30 V; I
= 30 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
4
CONDITIONS
B
= 50 mA
C
C
C
C
C
E
E
E
= 0
= 100 mA
= 500 mA
= 1 A
= 100 mA
B
B
= 0
= 0; T
= I
CE
= 1 mA
= 50 mA; note 1
e
= 10 V;
= 0; f = 1 MHz
j
= 150 C
300
260
210
100
MIN.
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450
350
290
200
TYP.
PBSS5130T
Product specification
220
28
MAX.
100
50
100
100
225
0.75
nA
nA
mV
mV
m
V
MHz
pF
UNIT
A