PBSS9110AS Philips Semiconductors, PBSS9110AS Datasheet - Page 3

• Manufacturer Part Number: PBSS9110AS
• Description: 1A PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
5. Limiting values
9397 750 12841
Product data sheet
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Symbol
V
V
V
I
I
I
P
T
T
T
CM
C
B
Fig 1. Power derating curves.
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
(1) 1 cm
(2) Standard footprint.
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
peak collector current
collector current (DC)
base current (DC)
total power dissipation
junction temperature
operating ambient temperature
storage temperature
2
collector mounting pad.
(mW)
P
1000
tot
800
600
400
200
Rev. 01 — 10 June 2004
0
0
(1)
(2)
40
Conditions
open emitter
open base
open collector
T
T
j(max)
amb
80
100 V, 1 A PNP low V
25 C
120
T
amb
001aaa816
[1]
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
( C)
Min
-
-
-
-
-
-
-
-
PBSS9110AS
65
65
160
CEsat
Max
830
150
+150
+150
120
100
5
3
1
0.3
(BISS) transistor
www.DataSheet4U.com
Unit
V
V
V
A
A
A
mW
C
C
C
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