PBSS9110AS Philips Semiconductors, PBSS9110AS Datasheet - Page 3
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PBSS9110AS
Manufacturer Part Number
PBSS9110AS
Description
1A PNP low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet
1.PBSS9110AS.pdf
(12 pages)
Philips Semiconductors
5. Limiting values
9397 750 12841
Product data sheet
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Symbol
V
V
V
I
I
I
P
T
T
T
CM
C
B
Fig 1. Power derating curves.
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
(1) 1 cm
(2) Standard footprint.
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
peak collector current
collector current (DC)
base current (DC)
total power dissipation
junction temperature
operating ambient temperature
storage temperature
2
collector mounting pad.
(mW)
P
1000
tot
800
600
400
200
Rev. 01 — 10 June 2004
0
0
(1)
(2)
40
Conditions
open emitter
open base
open collector
T
T
j(max)
amb
80
100 V, 1 A PNP low V
25 C
120
T
amb
001aaa816
[1]
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
( C)
Min
-
-
-
-
-
-
-
-
PBSS9110AS
65
65
160
CEsat
Max
830
150
+150
+150
120
100
5
3
1
0.3
(BISS) transistor
www.DataSheet4U.com
Unit
V
V
V
A
A
A
mW
C
C
C
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