PBSS9110AS Philips Semiconductors, PBSS9110AS Datasheet - Page 4
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PBSS9110AS
Manufacturer Part Number
PBSS9110AS
Description
1A PNP low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet
1.PBSS9110AS.pdf
(12 pages)
Philips Semiconductors
6. Thermal characteristics
Table 6:
[1]
9397 750 12841
Product data sheet
Symbol
R
Fig 2. Transient thermal impedance as a function of pulse time; typical values.
th(j-a)
(10)
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
(K/W)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Z
10
th
10
10
10
1
3
2
1
10
Mounted on FR4 PCB; standard footprint.
= 1.
= 0.75.
= 0.5.
= 0.33.
= 0.2.
= 0.1.
= 0.05.
= 0.02.
= 0.01.
= 0.
5
Thermal characteristics
Parameter
thermal resistance from junction to ambient
10
(10)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
4
10
3
10
2
Rev. 01 — 10 June 2004
10
1
Conditions
in free air
100 V, 1 A PNP low V
1
10
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
PBSS9110AS
[1]
CEsat
10
Typ
150
2
(BISS) transistor
t
p
001aaa817
www.DataSheet4U.com
(s)
10
Unit
K/W
3
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