PBSS9110AS Philips Semiconductors, PBSS9110AS Datasheet - Page 5

• Manufacturer Part Number: PBSS9110AS
• Description: 1A PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
7. Characteristics
Table 7:
T
[1]
9397 750 12841
Product data sheet
Symbol
I
I
I
h
V
R
V
V
f
C
CBO
CES
EBO
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test t
= 25 C unless otherwise specified.
Parameter
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
Characteristics
p
300 s;
0.02.
Conditions
V
V
T
V
V
V
V
V
V
I
I
I
I
I
I
I
f = 100 MHz
I
f = 1 MHz
C
C
C
C
C
C
C
E
j
CB
CB
CE
EB
CE
CE
CE
CE
= 150 C
= I
= 250 mA; I
= 500 mA; I
= 1 A; I
= 1 A; I
= 1 A; I
= 1 A; V
= 50 mA; V
= 80 V; I
= 80 V; I
= 80 V; V
= 4 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
e
Rev. 01 — 10 June 2004
= 0 A; V
B
B
B
CE
= 100 mA
= 100 mA
= 100 mA
C
C
C
C
C
E
E
= 0 A
= 1 mA
= 250 mA
= 0.5 A
= 1 A
CB
= 5 V
BE
CE
B
B
= 0 A
= 0 A;
= 25 mA
= 50 mA
= 10 V;
= 0 V
= 10 V;
100 V, 1 A PNP low V
[1]
[1]
[1]
Min
-
-
-
-
150
150
150
125
-
-
-
-
-
-
100
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
PBSS9110AS
Typ
-
-
-
-
-
-
-
-
-
-
170
-
-
-
-
CEsat
(BISS) transistor
Max
-
-
450
-
320
-
17
www.DataSheet4U.com
100
50
100
100
120
180
320
1.1
1.0
Unit
nA
nA
nA
mV
mV
mV
m
V
V
MHz
pF
A
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