PBSS9110AS Philips Semiconductors, PBSS9110AS Datasheet - Page 6
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PBSS9110AS
Manufacturer Part Number
PBSS9110AS
Description
1A PNP low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet
1.PBSS9110AS.pdf
(12 pages)
Philips Semiconductors
9397 750 12841
Product data sheet
Fig 3. DC current gain as a function of collector
Fig 5. Collector-emitter saturation voltage as a
V
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
h
CEsat
(V)
10
10
FE
600
400
200
0
1
1
2
V
current; typical values.
I
function of collector current; typical values.
10
10
C
amb
amb
amb
amb
amb
amb
CE
/I
1
1
B
= 10 V.
= 10.
= 100 C.
= 25 C.
= 55 C.
= 100 C.
= 25 C.
= 55 C.
1
1
(1)
(2)
(3)
10
10
(1)
(2)
(3)
10
10
2
2
10
10
001aaa378
001aaa376
3
I
3
I
C
C
(mA)
(mA)
10
10
Rev. 01 — 10 June 2004
4
4
Fig 4. Base-emitter voltage as a function of collector
Fig 6. Collector-emitter saturation voltage as a
V
V
(1) T
(2) T
(3) T
(1) I
(2) I
CEsat
(V)
(V)
10
10
BE
1.2
0.8
0.4
0
1
1
2
V
current; typical values.
T
function of collector current; typical values.
10
10
C
C
amb
amb
amb
amb
CE
/I
/I
100 V, 1 A PNP low V
B
B
1
1
= 10 V.
= 50.
= 20.
= 55 C.
= 25 C.
= 100 C.
= 25 C.
1
1
10
10
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
(1)
(2)
(3)
(1)
(2)
PBSS9110AS
10
10
2
2
CEsat
10
10
(BISS) transistor
001aaa380
001aaa377
www.DataSheet4U.com
3
3
I
I
C
C
(mA)
(mA)
10
10
4
4
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