DIM1200FSM17-A000 Dynex, DIM1200FSM17-A000 Datasheet - Page 7

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DIM1200FSM17-A000

Manufacturer Part Number
DIM1200FSM17-A000
Description
Single Switch IGBT Module
Manufacturer
Dynex
Datasheet
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1600
1200
1000
1400
3200
2800
2400
2000
1600
1200
800
600
400
200
800
400
0
0
0
0
Fig. 9 Diode reverse bias safe operating area
Fig. 7 Diode typical forward characteristics
T
V
and not the auxiliary terminals
j
F
= 125˚C
is measured at power busbars
0.5
400
1.0
Reverse voltage, V
Foward voltage, V
800
1.5
1200
2.0
T
R
j
= 25˚C
F
- (V)
- (V)
2.5
1600
T
j
= 125˚C
3.0
2000
3.5
10000
1000
2800
2400
2000
1600
1200
100
400
800
10
1
0
1
0
T
T
V
R
vj
case
ge
g(min)
Fig. 8 Reverse bias safe operating area
= 125˚C, T
Fig. 10 Forward bias safe operating area
200
= ±15V
= 125˚C
= 1.5Ω
400
I
Collector emitter voltage, V
c(max)
Collector-emitter voltage, V
10
c
= 75˚C
600
DC
DIM1200FSM17-A000
800 1000 1200 1400 1600 1800
100
Module
ce
ce
Chip
- (V)
1000
- (V)
t
t
t
p
p
p
= 100µs
= 50µs
= 1 ms
10000
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