DIM400GDM33-A000 Dynex, DIM400GDM33-A000 Datasheet - Page 6

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DIM400GDM33-A000

Manufacturer Part Number
DIM400GDM33-A000
Description
Dual Switch IGBT Module Preliminary Information
Manufacturer
Dynex
Datasheet
DIM400GDM33-A000
TYPICAL CHARACTERISTICS
6/10
900
800
700
600
500
400
300
200
100
800
700
600
500
400
300
200
100
Fig. 5 Typical switching energy vs collector current
0
0
0
0
Conditions:
T
R
V
C
Common emitter.
T
case
g
cc
ge
case
= 4.7 Ohms
= 1800V
= 68nF
Fig. 3 Typical output characteristics
= 125˚C
= 25˚C
100
1
Collector-emitter voltage, Vce - (V)
Collector current, I
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
2
200
3
300
C
- (A)
4
400
V
V
V
V
GE
GE
GE
GE
5
= 20V
= 15V
= 12V
= 10V
E
E
E
on
off
rec
500
6
1400
1200
1000
800
600
400
200
800
700
600
500
400
300
200
100
Fig. 6 Typical switching energy vs gate resistance
0
0
3
1
Conditions:
T
I
V
C
C
Common emitter.
T
case
cc
ge
= 400A
case
= 1800V
Fig. 4 Typical output characteristics
= 68nF
4
= 125˚C
= 125˚C
2
Collector-emitter voltage, Vce - (V)
5
Gate resistance, R
3
6
4
7
www.dynexsemi.com
8
g
5
- (Ohms)
9
6
10
V
V
V
V
GE
GE
GE
GE
7
11
= 20V
= 15V
= 12V
= 10V
E
E
E
on
off
rec
12
8

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