DIM800DDM12 Dynex, DIM800DDM12 Datasheet - Page 6

• Manufacturer Part Number: DIM800DDM12
• Description: Dual Switch IGBT Module Preliminary Information
• Manufacturer: Dynex

DIM800DDM12-A000
TYPICAL CHARACTERISTICS
6/10
1600
1400
1200
1000
180
160
140
120
100
800
600
400
200
Fig. 5 Typical switching energy vs collector current
80
60
40
20
0
0
0
0
T
V
R
Common emitter
T
V
and not the auxiliary terminals
c
ce
g
case
ce
= 125˚C,
= 2.7Ω
= 600V,
Fig. 3 Typical output characteristics
is measured at power busbars
0.5
= 25˚C
200
Collector-emitter voltage, V
1.0
Collector current, I
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1.5
400
2.0
600
2.5
C
- (A)
ce
- (V)
3.0
800
V
V
V
V
GE
GE
GE
GE
3.5
= 10V
= 12V
= 15V
= 20V
E
E
E
on
off
rec
1000
4.0
1600
1400
1200
1000
350
300
250
200
150
100
800
600
400
200
50
Fig. 6 Typical switching energy vs gate resistance
0
0
2
0
T
V
I
C
Common emitter
T
V
and not the auxiliary terminals
c
ce
= 800A
case
ce
= 125˚C,
0.5
= 600V,
is measured at power busbars
Fig. 4 Typical output characteristics
= 125˚C
1.0
4
Collector-emitter voltage, V
Gate resistance, R
1.5
2.0
6
2.5
www.dynexsemi.com
g
3.0
8
- (ohms)
3.5
ce
- (V)
10
4.0
V
V
V
V
GE
GE
GE
GE
4.5
= 10V
= 12V
= 15V
= 20V
E
E
E
on
off
rec
12
5.0