LMN400E01 Diodes Incorporated, LMN400E01 Datasheet - Page 4

• Manufacturer Part Number: LMN400E01
• Description: 400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET
• Manufacturer: Diodes Incorporated

DS30750 Rev. 4 - 2
Electrical Characteristics: ESD Protected N Channel MOSFET (Q2)
* Pulse Test: Pulse width, tp <300 us, Duty Cycle, d 0.02
Notes:
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage, BVDSS
Zero Gate Voltage Drain Current (Drain Leakage
Current)
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
ON CHARACTERISTICS (Note 4)
Gate Source Threshold Voltage (Control Supply
Voltage)
Static Drain-Source On-State Voltage
On-State Drain Current
Static Drain-Source On Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS*
Turn-On Delay Time
Turn-Off Delay Time
SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward On-Voltage
Maximum Continuous Drain-Source Diode Forward
Current (Reverse Drain Current)
Maximum Pulsed Drain-Source Diode Forward
Current
4. Short duration test pulse used to minimize self-heating effect.
Characteristic
V
Symbol
V
R
V
(BR)DSS
I
I
I
td
td
I
GSSF
GSSR
C
DS(on)
D(on)
DS(on)
C
C
V
GS(th)
g
DSS
I
I
SM
(on)
(off)
FS
oss
SD
iss
rss
S
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4 of 10
Min
500
60
80
1
0.09
0.88
Typ
260
1.6
0.6
1.6
1.2
Max
3.75
300
800
-10
2.5
1.5
1.5
10
50
25
20
40
1
3
2
5
Unit
mA
mS
mA
mA
pF
pF
pF
ns
ns
V
V
V
V
@ T
A
A
A
A
V
V
V
V
V
V
V
V
V
V
V
V
I
V
f = 1MHz
V
I
R
Ohm
V
D
D
= 25 C unless otherwise specified
GS
GS
GS
GS
DS
GS
GS
GS
DS
GS
GS
DS
DS
DD
GS
G
= 200 mA
= 200mA,
= 25 Ohm, R
= 0V, I
=0V, V
= 20V, V
= -20V, V
= V
= 5V, I
= 10V, I
= 10V,
= 5V, ID = 50mA
= 10V, ID = 500mA
= -25V, V
= 30V, V
= 0V, I
2*V
2*V
Test Condition
GS
DS(ON)
DS(ON)
, I
D
D
S
DS
D
D
= 10uA
= 300 mA*
DS
= 50mA
GS
DS
GS
= 60V
= 0.25mA
= 500mA
LMN400E01
,
= 0V
=10V,
L
= 0V
= 0V,
= 150