LMN400E01 Diodes Incorporated, LMN400E01 Datasheet - Page 6

• Manufacturer Part Number: LMN400E01
• Description: 400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET
• Manufacturer: Diodes Incorporated

DS30750 Rev. 4 - 2
400
200
300
100
1.5
0.5
1.4
1.0
0.8
0.2
1.2
0.6
0.4
0
0
0
2
1
-50
1
0
V
GS
V
-25
CE
= 8V
T , JUNCTION TEMPERATURE (°C)
V
= 5V
J
I
DS
C
1
Fig. 12 Gate Threshold Voltage
,
Fig. 10 Output Characteristics
Typical N-Channel MOSFET (ESD Protected) Characteristics
,
Fig. 9 h
COLLECTOR CURRENT (mA)
DRAIN-SOURCE VOLTAGE (V)
0
vs. Junction Temperature
10
25
FE
V
2
GS
vs. I @ V
= 10V
50
T =
A
C
T =
V
A
150°C
GS
T =
V
-55°C
A
3
75
GS
= 3V
T =
25°C
CE
T =
100
A
= 4V
A
V
125°C
= 5V
GS
85°C
100
V
V
V
I = 1mA
Pulsed
D
GS
DS
DS
= 5V
= V
= 10V
= 6V
4
125
GS
www.diodes.com
150
1000
5
6 of 10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.1
0
10
1
0.001
0
Fig. 13 Static Drain-Source On-Resistance
V
1
GS
Fig. 11 Transfer Characteristics
,
T = 25°C
GATE-SOURCE VOLTAGE (V)
A
V
I
D
T = 150°C
DS
,
A
DRAIN CURRENT (A)
2
0.01
= 10V
vs. Drain Current
T = 125°C
T = 0°C
A
A
3
T =
A
T =
125°C
A
V
Pulsed
T = -25°C
150°C
4
GS
A
0.1
T = 85°C
= 10V
A
T = -55°C
A
5
LMN400E01
T =
T =
T =
A
A
A
-55°C
25°C
85°C
6
1