LMN400E01 Diodes Incorporated, LMN400E01 Datasheet - Page 5

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LMN400E01

Manufacturer Part Number
LMN400E01
Description
400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET
Manufacturer
Diodes Incorporated
Datasheet
DS30750 Rev. 4 - 2
200
100
250
150
50
0.2
0.3
0.1
12
10
0
2
8
6
4
0
0
0
0.01
1
25
I /I = 10
C B
T , AMBIENT TEMPERATURE (°C)
I /I = 10
C B
A
Fig. 3, Max Power Dissipation vs
Fig. 5 V
I
Fig. 7 V
C
I
C
,
T =
,
A
COLLECTOR CURRENT (mA)
50
COLLECTOR CURRENT (A)
T =
A
150°C
Ambient Temperature
10
150°C
CE(SAT)
BE(SAT)
T =
75
A
T =
125°C
A
vs. I @ I /I = 10
vs. I @ I /I = 10
Pre-Biased PNP Transistor Characteristics
0.1
125°C
100
C
C
100
C B
C B
125
Typical Characteristics
T =
T =
A
A
T =
T =
T =
A
T =
A
A
A
85°C
85°C
150
25°C
-55°C
25°C
-55°C
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1000
1
175
5 of 10
500
300
450
400
350
250
200
150
100
12
15
0.3
0.6
0.5
0.4
0.2
50
0.1
9
6
3
0
0
0
10
0.01
0
lb = 10mA
0.5 1.0 1.5 2.0 2.5 3.0 3.5
lb = 9mA
I /I = 20
C B
I /I = 10
V
C B
V , COLLECTOR-BASE VOLTAGE (V)
CE
I
lb = 8mA
C
Fig. 8 V
CB
,
Fig. 6 V
= 5V
Voltage Drop (Pass Element PNP)
T =
I
COLLECTOR CURRENT (mA)
A
C
,
150°C
COLLECTOR CURRENT (A)
100
Fig. 4, Output Current vs.
T =
A
BE(ON)
lb = 7mA
CE(SAT)
150°C
T =
T =
A
A
125°C
vs. I @ V
125°C
0.1
lb = 6mA
vs. I @ I /I = 20
C
lb = 5mA
C
1000
T =
CE
T =
A
A
C B
4.0
lb = 4mA
= 5V
85°C
T =
25°C
T =
A
T = 25°C
T =
A
lb = 1mA
A
A
85°C
4.5
-55°C
lb = 3mA
25°C
lb = 2mA
LMN400E01
T =
A
5.0
-55°C
10000
5.5
1

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