LMN400E01 Diodes Incorporated, LMN400E01 Datasheet - Page 7

• Manufacturer Part Number: LMN400E01
• Description: 400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET
• Manufacturer: Diodes Incorporated

DS30750 Rev. 4 - 2
0.001
0.1
10
0.01
2.5
1.5
0.5
0.1
1
2
0
1
0.001
1
-75 -50 -25
0
Fig. 16
V , BODY DIODE FORWARD VOLTAGE (V)
SD
V
Pulsed
Fig. 14 Static Drain-Source On-Resistance
T = 150°C
GS
V
A
GS
= 10V
T , JUNCTION TEMPERATURE (°C)
= 10V
j
Static Drain-Source On-State Resistance
Fig. 18 Reverse Drain Current
T = 25°C
A
vs. Source-Drain Voltage
vs. Junction Temperature
I , DRAIN CURRENT (A)
D
0.01
0
vs. Drain Current
T = 0°C
25
T = 125°C
A
A
0.5
V
50
GS
= 0V
T = -25°C
A
75
0.1
T = 85°C
A
100 125 150
T = 25°C
Pulsed
I = 300mA
T = -55°C
D
A
A
V
Pulsed
I = 150mA
D
GS
= 5V
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1
1
7 of 10
0.001
0.01
0.1
700
600
400
300
500
200
100
5
4
6
3
2
0
1
7
1
0
0
0
I = 150mA
D
0
V
Pulsed
Fig. 15 Static Drain-Source On-Resistance
2
GS
vs. Drain Current (V
= 0V
T
Fig. 19 Forward Transconductance
V
A
GS,
V , SOURCE-DRAIN VOLTAGE (V)
= 150°C
I = 300mA
4
D
SD
Fig. 17 Reverse Drain Current
I , DRAIN CURRENT (A)
0.2
GATE SOURCE VOLTAGE (V)
D
vs. Gate-Source Voltage
vs. Source-Drain Voltage
6
0.5
T =
8
A
T
A
T =
A
= -55°C
150°C
0.4
10
-55°C
DS
12
> I *R
T =
A
D
1
T =
T = 125°C
125°C
14
T = -25°C
T = 0°C
T = 25°C
T = 85°C
A
A
A
A
A
A
0.6
DS(ON)
-25°C
16
T =
T =
T = 25°C
Pulsed
A
A
LMN400E01
A
)
25°C
85°C
18
0.8
1.5
20