CHA7012 United Monolithic Semiconductors, CHA7012 Datasheet - Page 9

• Manufacturer Part Number: CHA7012
• Description: X-band HBT High Power Amplifier
• Manufacturer: United Monolithic Semiconductors

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X-band High Power Amplifier
Ref. : DSCHA70127235 - 23 Aug 07
Bonding recommendations
For thermal and electrical considerations, the chip should be brazed on a metal base plate.
The RF, DC and modulation port inter-connections should be done according to the following
table:
Assembly recommendations in test fixture
(using TTL circuits)
* Performances obtained with the same accesses connected to the same supply
Note : Supply feed should be capacitively by-passed. 25µm diameter gold wire is to be prefered.
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
decoupling level for double
decoupling level for single
DC pads to 1
DC pads to 1
1
1
level for double bonding
level for single bonding
st
st
Tel.: [phone] - Fax : [phone]
decoupling level to 2
decoupling level to 2
bonding
bonding
st
st
(1)
(12)
decoupling
decoupling
*
*
nd
nd
9/10
Two 1.2mm length wires with a diameter of 25 m
Two 1.2mm length wires with a diameter of 25 m
One 1.2mm length wires with a diameter of 25 m
One 1.2mm length wires with a diameter of 25 m
400 m length with wire diameter of 25 m
400 m length with wire diameter of 25 m
Inductance (Lbonding) = 0.3nH
Inductance (Lbonding) = 0.3nH
Inductance (Lbonding) =0.7nH
Inductance (Lbonding) =0.7nH
Inductance (Lbonding) =1nH
Inductance (Lbonding) =1nH
Specifications subject to change without notice
CHA7012
*
*