NT256D64S88B1G Nanya Technology, NT256D64S88B1G Datasheet - Page 21

• Manufacturer Part Number: NT256D64S88B1G
• Description: (NT256D64S88Bxx) 256MB DDR DIMM
• Manufacturer: Nanya Technology

NT512D64S8HB1G / NT512D64S8HB1GY / NT512D64S8HB0G
NT256D64S88B1G / NT256D64S88B1GY NT256D64S88B0G
NT128D64SH4B1G / NT512D72S8PB0G (ECC) / NT256D72S89B0G (ECC)
Unbuffered DDR DIMM
AC Timing Specifications for DDR SDRAM Devices Used on Module
T
REV 2.2
Aug 3, 2004
Preliminary
Symbol
A
= 0 °C ~ 70 °C; V
t
t
t
t
t
t
t
RP RE
RP ST
t
t
t
t
t
t
t
PDEX
XSNR
XSRD
t
WTR
t
RCD
t
RRD
REFI
IPW
RAS
RFC
RAP
DAL
t
WR
RC
RP
IS
Address and control input setup time
(slow slew rate)
Input pulse width
Read preamble
Read postamble
Active to Precharge command
Active to Active/Auto-refresh command period
Auto-refresh to Active/Auto-refresh command
period
Active to Read or Write delay
Active to Read Command with Auto-precharge
Precharge command period
Active bank A to Active bank B command
Write recovery time
Auto-precharge write recovery + precharge time
Internal write to read command delay
Power down exit time
Exit self-refresh to non-read command
Exit self-refresh to read command
Average Periodic Refresh Interval
DDQ
= V
DD
= 2.5V ± 0.2V (PC2100/PC2700); V
Parameter
DDQ
t
42ns
0.40
CK
(t
Min.
(t
t
200
0.7
2.2
0.9
21
55
70
15
15
15
10
15
CK
75
= V
RP
WR
1
5
) +
PC3200
)
/
/
DD
5T
= 2.6V ± 0.1V (PC3200) (Part 2 of 2)
120us
Max.
0.60
1.1
7.8
NANYA reserves the right to change products and specifications without notice.
t
42ns
CK
(t
Min.
0.40
(t
t
200
0.8
2.2
0.9
CK
60
72
18
18
18
12
15
75
WR
RP
1
6
) +
PC2700
)
/
/
6K
120us
Max.
0.60
1.1
7.8
© NANYA TECHNOLOGY CORPORATION
t
45ns
0.40
(t
CK
(t
Min.
t
200
1.0
2.2
0.9
7.5
CK
65
75
20
20
20
15
15
75
WR
RP
1
) +
PC2100
)
/
/
75B
120us
Max.
0.60
1.1
7.8
Unit
ns
ns
t
t
ns
ns
ns
ns
ns
ns
ns
t
t
ns
ns
t
µs
CK
CK
CK
CK
CK
2-4, 12
1-4, 13
10-12,
Notes
1-4, 8
2-4,
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
14