MBM29SL800BD Fujitsu Media Devices, MBM29SL800BD Datasheet - Page 26

• Manufacturer Part Number: MBM29SL800BD
• Description: (MBM29SL800TD/BD) FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
• Manufacturer: Fujitsu Media Devices

26
MBM29SL800TD
Note : Test Conditions :
Read Cycle Time
Address to Output Delay
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From Addresses,
CE or OE, Whichever Occurs First
RESET Pin Low to Read Mode
CE to BYTE Switching Low or High
AC CHARACTERISTICS
• Read Only Operations Characteristics
Notes :
Output Load : 1 TTL gate and 30 pF (MBM29SL800TD/BD-10)
Input rise and fall times : 5 ns
Input pulse levels : 0.0 V or V
Timing measurement reference level
Input : 0.5
Output : 0.5
Parameter
C
C
L
L
30 pF including jig capacitance (MBM29SL800TD/BD-10)
100 pF including jig capacitance (MBM29SL800TD/BD-12)
1 TTL gate and 100 pF (MBM29SL800TD/BD-12)
Device
Under
V
Test
CC
V
CC
CC
-10/12
C
L
Figure 4 Test Conditions
JEDEC
t
t
t
t
t
t
t
GHQZ
AVAV
AVQV
ELQV
GLQV
EHQZ
AXQX
/MBM29SL800BD
Symbol
Standard
IN3064
or Equivalent
t
6.2 k
READY
t
t
t
ELFH
t
t
t
t
t
t
ELFL
ACC
RC
CE
OE
OH
DF
DF
Test Setup
V
CE
OE
OE
CC
2.7 k
V
V
V
IL
IL
IL
Diodes
or Equivalent
Min
100
0
-10
IN3064
-10/12
Value (Note)
Max
100
100
35
30
30
20
5
Min
120
0
-12
Max
120
120
50
40
40
20
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
s