MBM29SL800BD Fujitsu Media Devices, MBM29SL800BD Datasheet - Page 28

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MBM29SL800BD

Manufacturer Part Number
MBM29SL800BD
Description
(MBM29SL800TD/BD) FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
Manufacturer
Fujitsu Media Devices
Datasheet
28
MBM29SL800TD
Notes : Test conditions T
Notes : Test conditions T
Notes : Test conditions T
Sector Erase Time
Word Programming Time
Byte Programming Time
Chip Programming Time
Program/Erase Cycle
Input Capacitance
Output Capacitance
Control Pin Capacitance
Input Capacitance
Output Capacitance
Control Pin Capacitance
Input Capacitance
Output Capacitance
Control Pin Capacitance
ERASE AND PROGRAMMING PERFORMANCE
TSOP (I) PIN CAPACITANCE
FBGA PIN CAPACITANCE
SCSP PIN CAPACITANCE
Parameter
DQ
DQ
DQ
Parameter
Parameter
Parameter
15
15
15
/A
/A
/A
-1
-1
-1
pin capacitance is stipulated by output capacitance.
pin capacitance is stipulated by output capacitance.
pin capacitance is stipulated by output capacitance.
A
A
A
100,000
Min
25 C, f
25 C, f
25 C, f
C
C
C
C
C
C
C
C
C
IN
OUT
IN2
IN
OUT
IN2
IN
OUT
IN2
-10/12
Symbol
Symbol
Symbol
Limits
14.6
10.6
Typ
1.0 MHz
1.0 MHz
1.0 MHz
1.5
7.7
/MBM29SL800BD
V
V
V
V
V
V
V
V
V
Max
IN
OUT
IN
IN
OUT
IN
IN
OUT
IN
360
300
200
15
0
0
0
0
0
0
Test Setup
Test Setup
Test Setup
0
0
0
cycle
Unit
s
s
s
s
Excludes programming time prior to erasure
Excludes system-level overhead
Excludes system-level overhead
Typ
Typ
Typ
7.5
7.5
7.5
10
10
10
8
8
8
Value
Value
Value
-10/12
Remarks
Max
Max
Max
9.5
9.5
9.5
10
13
10
13
10
13
Unit
Unit
Unit
pF
pF
pF
pF
pF
pF
pF
pF
pF

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