MX29LV800AB Macronix, MX29LV800AB Datasheet - Page 26

• Manufacturer Part Number: MX29LV800AB
• Description: 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
• Manufacturer: Macronix

AC CHARACTERISTICS TA = -40
TABLE 11. Erase/Program Operations
NOTES:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
3. 29LV800T/B-70R operates at VCC=3.0V~3.6V.
P/N:PM0709
SYMBOL
tWC
tAS
tAH
tDS
tDH
tOES
tGHWL
tCS
tCH
tWP
tWPH
tWHWH1
tWHWH2
tVCS
tRB
tBUSY
tWPP1
tWPP2
tBAL
PARAMETER
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Setup Time
Read Recovery Time Before Write
(OE High to WE Low)
CE Setup Time
CE Hold Time
Write Pulse Width
Write Pulse Width High
Programming Operation (Note 2)
(Byte/Word program time)
Sector Erase Operation (Note 2)
VCC Setup Time (Note 1)
Recovery Time from RY/BY
Program/Erase Vaild to RY/BY Delay
Write Pulse Width for Sector Protect
(A9, OE Control)
Write Pulse Width for Chip Unprotected
(A9, OE Control)
Sector Address Load Time
MX29LV800T/B & MX29LV800AT/AB
o
C to 85
o
C, VCC = 2.7V~3.6V
26
9/11(TYP.)
0.7(TYP.)
29LV800(A)T/B-70 (R) 29LV800(A)T/B-90
MIN.
70
0
45
35
0
0
0
0
0
35
30
50
0
100ns
100ns
MAX.
10us
(Typ.)
(Typ.)
50
90
12ms
9/11(TYP.)
0.7(TYP.)
MIN.
90
0
45
45
0
0
0
0
0
35
30
50
0
100ns
100ns
MAX.
90
10us
(Typ.)
12ms
(Typ.)
50
REV. 2.5, DEC. 23, 2003
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
sec
us
ns
ns
us