psmn9r0-30kl NXP Semiconductors, psmn9r0-30kl Datasheet - Page 3

• Manufacturer Part Number: psmn9r0-30kl
• Description: N-channel 30 V 9 M Logic-level Mosfet In So8
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN9R0-30KL
Objective data sheet
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
(A)
I
D
20
15
10
5
0
mounting base temperature
V
Continuous drain current as a function of
0
GS
Limiting values
≥ 10 V
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
100
150
All information provided in this document is subject to legal disclaimers.
T
003aaf979
mb
( ° C)
200
Rev. 01 — 14 April 2011
Conditions
T
T
V
V
pulsed; t
see
T
T
pulsed; t
V
V
j
j
mb
mb
GS
GS
GS
sup
≥ 25 °C; T
≥ 25 °C; T
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 30 V; unclamped; R
p
p
≤ 10 µs; T
≤ 10 µs; T
Fig 2.
j
j
N-channel 30 V 9 mΩ logic-level MOSFET in SO8
≤ 150 °C
≤ 150 °C; R
mb
mb
j(init)
P
(%)
der
120
= 100 °C; see
= 25 °C; see
80
40
Figure 2
0
= 25 °C; I
function of solder point temperature
Normalized total power dissipation as a
0
mb
mb
= 25 °C;
= 25 °C
GS
GS
D
= 20 kΩ
50
= 16 A;
= 50 Ω
Figure 1
Figure 1
PSMN9R0-30KL
100
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
003aab937
mb
150
150
260
Max
30
30
20
11
16
64
4
16
64
77
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
3 of 15