psmn9r0-30kl NXP Semiconductors, psmn9r0-30kl Datasheet - Page 8

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psmn9r0-30kl

Manufacturer Part Number
psmn9r0-30kl
Description
N-channel 30 V 9 M Logic-level Mosfet In So8
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
PSMN9R0-30KL
Objective data sheet
Fig 7.
Fig 9.
R
(m Ω )
(S)
DSon
g
fs
60
45
30
15
20
15
10
0
5
0
drain current; typical values
of gate-source voltage; typical values
T
Forward transconductance as a function of
T
Drain-source on-state resistance as a function
0
0
j
j
= 25°C; V
= 25°C; I
5
4
D
DS
= 5 A
= 10 V
10
8
15
12
All information provided in this document is subject to legal disclaimers.
003aaf984
003aaf988
V
I
D
GS
(A)
(V)
20
16
Rev. 01 — 14 April 2011
Fig 8.
Fig 10. Sub-threshold drain current as a function of
N-channel 30 V 9 mΩ logic-level MOSFET in SO8
(pF)
C
2000
1500
1000
10
10
10
10
10
10
(A)
I
500
D
-1
-2
-3
-4
-5
-6
0
function of gate-source voltage; typical values
gate-source voltage
V
Input and reverse transfer capacitances as a
0
0
DS
= 0 V; f = 1 MHz
min
1
4
PSMN9R0-30KL
typ
8
2
V
© NXP B.V. 2011. All rights reserved.
V
GS
GS
003aaf985
003aab271
max
(V)
C
(V)
C
rss
iss
12
3
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