sir662dp Vishay, sir662dp Datasheet - Page 4

• Manufacturer Part Number: sir662dp
• Description: N-channel 60 V D-s Mosfet
• Manufacturer: Vishay

SiR662DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
0.001
- 0.1
- 0.4
- 0.7
- 1.0
0.01
100
0.1
0.5
0.2
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
T
0.2
J
= 150 °C
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
T
I
J
D
= 25 °C
= 250 μA
75
0.8
0.01
100
0.1
10
100
Limited by R
1
0.01
I
1.0
D
Safe Operating Area, Junction-to-Ambient
Single Pulse
= 5 mA
* V
125
T
A
GS
= 25 °C
New Product
> minimum V
DS(on)
1.2
150
V
DS
0.1
- Drain-to-Source Voltage (V)
*
GS
at which R
1
BVDSS Limited
0.015
0.012
0.009
0.006
0.003
0.000
DS(on)
200
160
120
80
40
0
10
0
is specified
0 .
0
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
2
1 ms
10 ms
100 ms
1 s
10 s
DC
100
V
0.01
GS
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
S11-0246-Rev. A, 14-Feb-11
Document Number: 65253
6
I
T
T
1
D
J
J
= 20 A
= 125 °C
= 25 °C
8
10
1
0