sir662dp Vishay, sir662dp Datasheet - Page 3

• Manufacturer Part Number: sir662dp
• Description: N-channel 60 V D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 65253
S11-0246-Rev. A, 14-Feb-11
0.0035
0.0031
0.0027
0.0023
0.0019
0.0015
80
64
48
32
16
10
On-Resistance vs. Drain Current and Gate Voltage
0
8
6
4
2
0
0.0
0
0
V
I
D
V
GS
V
GS
= 20 A
GS
V
0.5
16
14
= 4.5 V
DS
V
= 10 V
= 10 V thru 4 V
DS
Output Characteristics
= 20 V
Q
- Drain-to-Source Voltage (V)
g
I
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
1.0
32
28
V
DS
= 30 V
V
GS
1.5
48
42
= 3 V
V
DS
= 40 V
V
GS
2.0
64
56
= 2 V
New Product
2.5
80
70
5000
4000
3000
2000
1000
2.0
1.7
1.4
1.1
0.8
0.5
10
8
6
4
2
0
0
- 50
0
0
C
rss
On-Resistance vs. Junction Temperature
- 25
I
D
T
C
= 20 A
12
1
= 125 °C
T
V
V
C
T
GS
Transfer Characteristics
DS
0
J
= 25 °C
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
24
Capacitance
2
C
50
C
oss
iss
Vishay Siliconix
T
C
36
3
V
75
= - 55 °C
GS
SiR662DP
= 10 V
100
V
www.vishay.com
GS
48
4
= 4.5 V
125
150
60
5
3