sir662dp Vishay, sir662dp Datasheet - Page 5

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sir662dp

Manufacturer Part Number
sir662dp
Description
N-channel 60 V D-s Mosfet
Manufacturer
Vishay
Datasheet

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65253
S11-0246-Rev. A, 14-Feb-11
125
100
75
50
25
0
0
25
D
Power, Junction-to-Case
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
100
200
160
120
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
80
40
0
0
125
Package Limited
25
New Product
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
3.0
2.4
1.8
1.2
0.6
0.0
0
125
25
Power, Junction-to-Ambient
150
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
SiR662DP
100
www.vishay.com
125
150
5

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