irfr220-01 NXP Semiconductors, irfr220-01 Datasheet - Page 5

• Manufacturer Part Number: irfr220-01
• Description: Irfr220 N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
8. Characteristics
Table 5:
T
9397 750 08519
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
g
Q
Q
Q
C
C
C
t
t
t
t
Source-drain (reverse) diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
fs
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
r
= 25 C unless otherwise specified
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
forward transconductance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
reverse recovery time
recovered charge
Characteristics
Conditions
I
I
V
V
V
V
V
I
V
V
R
I
V
D
D
D
S
S
DS
DS
GS
GS
DS
GS
DD
GS
G
Rev. 01 — 14 August 2001
T
T
= 4.8 A; V
= 4.8 A; dI
= 250 A; V
= 250 A; V
= 4.8 A; V
= 18
j
j
= 200 V; V
= 160 V; V
= 20 V; V
= 10 V; I
= 50 V; I
= 0 V; V
= 100 V; R
= 0 V; V
= 25 C;
= 150 C;
GS
DD
DD
DS
S
D
D
Figure 7
/dt = 100 A/ s;
N-channel enhancement mode field effect transistor
GS
DS
= 2.9 A
Figure 7
= 2.9 A
GS
GS
DS
D
= 160 V; V
= 0 V;
= 30 V
= 25 V; f = 1 MHz;
= 20 ; V
= V
= 0 V
= 0 V
= 0 V; T
= 0 V
GS
Figure 12
and
;
and
Figure 9
j
GS
GS
8
= 125 C
8
= 10 V;
= 10 V;
Figure 11
Figure 13
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Min
200
2
1.7
IRFR220
Typ
3
10
0.7
10
1.5
4.0
280
41
25
5.0
17
22
18
85
0.2
Max
4
25
250
100
0.8
1.9
14
3.0
7.9
1.8
170
1.8
5 of 12
Unit
V
V
nA
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
C