irfr220-01 NXP Semiconductors, irfr220-01 Datasheet - Page 6

• Manufacturer Part Number: irfr220-01
• Description: Irfr220 N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 08519
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
T
T
R DSon
j
j
= 25 C
= 25 C
(A)
I D
( )
function of drain-source voltage; typical values.
of drain current; typical values.
10
2
3
8
6
4
2
0
1
0
0
0
4.5
2
2
4
4
6
5
6
6
8
5.5
8
V GS (V) = 10
VGS (V) =
8
V DS (V)
003aaa132
10
003aaa134
6
I D (A)
4.5
5.5
10
5
Rev. 01 — 14 August 2001
10
12
N-channel enhancement mode field effect transistor
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain source on-state resistance
T
j
= 25 C and 150 C; V
a
(A)
I D
1.0
function of gate-source voltage; typical values.
1.8
factor as a function of junction temperature.
3.4
2.6
0.2
2
4
3
5
1
0
-60
2
V DS > I D x R DSon
a
=
----------------------------- -
R
DSon 25 C
3
R
20
DSon
T j = 150 C
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
DS
I
D
4
R
DSon
100
25 C
IRFR220
5
T
V GS (V)
j
003aaa133
( C)
03aa31
180
6
6 of 12