irfr220-01 NXP Semiconductors, irfr220-01 Datasheet - Page 8
irfr220-01
Manufacturer Part Number
irfr220-01
Description
Irfr220 N-channel Enhancement Mode Field Effect Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.IRFR220-01.pdf
(12 pages)
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Philips Semiconductors
9397 750 08519
Product data
Fig 12. Source (diode forward) current as a function of
T
j
= 25 C and 150 C; V
source-drain (diode forward) voltage; typical
values.
(A)
I S
6
4
3
7
5
2
1
0
0.2
0.4
GS
T j = 150 C
= 0 V
0.6
0.8
V SD (V)
25 C
003aaa136
Rev. 01 — 14 August 2001
1.0
N-channel enhancement mode field effect transistor
Fig 13. Gate-source voltage as a function of gate
I
D
V GS
= 4.8 A; V
(V)
charge; typical values.
10
6
4
8
2
0
0
DD
= 160 V
2
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
4
IRFR220
6
Q G (nC)
003aaa137
8
8 of 12
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