mcf51mm256 Freescale Semiconductor, Inc, mcf51mm256 Datasheet - Page 43
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mcf51mm256
Manufacturer Part Number
mcf51mm256
Description
32-bit Coldfire V1 Central Processor Unit
Manufacturer
Freescale Semiconductor, Inc
Datasheet
1.MCF51MM256.pdf
(52 pages)
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1
3.14
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see the Memory chapter in the Reference
Manual for this device (MCF51MM256RM).
Freescale Semiconductor
The frequency of this clock is controlled by a software setting.
10
#
1
2
3
4
5
6
7
8
9
Supply voltage for program/erase
-40°C to 105°C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T = 25°C
L
Flash Specifications
to T
(OUTPUT)
(CPOL = 0)
(CPOL = 1)
(INPUT)
(INPUT)
(INPUT)
(INPUT)
H
NOTE:
MISO
= –40°C to + 105°C
MOSI
SCK
SCK
1. Not defined, but normally LSB of character just received
SS
4
Characteristic
2
2
1
NOTE
SEE
3
8
2
2
SLAVE
Figure 18. SPI Slave Timing (CPHA = 1)
5
4
6
11
MSB IN
2
Table 23. Flash Characteristics
2
MSB OUT
7
5
4
V
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
Burst
Mass
D_ret
Page
Fcyc
Read
prog
BIT 6 . . . 1
12
BIT 6 . . . 1
10,000
Min
150
1.8
1.8
15
—
5
100,000
Typical
20,000
4000
100
—
—
—
—
—
9
4
Preliminary Electrical Characteristics
SLAVE LSB OUT
3
LSB IN
Max
6.67
200
3.6
3.6
—
—
—
cycles
years
Unit
t
t
t
t
9
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
DD
supply.
C
D
D
D
D
C
C
P
P
P
P
43