nt1gt64u8hb0bn-3c Nanya Techology, nt1gt64u8hb0bn-3c Datasheet - Page 13

• Manufacturer Part Number: nt1gt64u8hb0bn-3c
• Description: Pc2-4200 / Pc2-5300 / Pc-6400 Unbuffered Ddr2 So-dimm
• Manufacturer: Nanya Techology

NT256T64UH4B0FN / NT512T64UH8B0FN / NT1GT64U8HB0BN
NT256T64UH4B0CN / NT512T64UH8B0CN / NT1GT64U8HB0AN
256MB: 32M x 64 / 512MB: 64M x 64 / 1GB: 128M x 64
PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM
Serial Presence Detect
REV 1.2
08/2007
Note:
92-255 Reserved
64-71
73-91
Byte
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
72
1.
Module part number:
Minimum Core Cycle Time (t
Min. Auto Refresh Command Cycle Time (t
Maximum Clock Cycle Time (t
Max. DQS-DQ Skew Factor (tQHS)
Read Data Hold Skew Factor (tQHS)
PLL Relock Time
Tcasemax
DT4R4W Delta
Thermal Resistance of DRAM Package from Top (Case)
to Ambient (Psi T-A DRAM)
DRAM Case Temperature Rise from Ambient due to
Activate-Precharge/Mode Bits (DT0/Mode Bits)
DRAM Case Temperature Rise from Ambient due to
Precharge/Quiet Standby (DT2N/DT2Q)
DRAM Case Temperature Rise from Ambient due to
precharge Power-Down (DT2P)
DRAM Case Temperature Rise from Ambient due to
Active Standby (DT3N)
DRAM Case Temperature Rise from Ambient due to
Active Power-Down with Fast PDN Exit (DT3P fast)
DRAM Case Temperature Rise from Ambient due to
Active Power-Down with Slow PDN Exit (DT3P slow)
DRAM Case Temperature Rise from Ambient due to
Page Open Burst Read/DT4R4W Mode Bit
(DT4R/DT4R4W Mode Bit)
DRAM Case Temperature Rise from Ambient due to
Burst Refresh (DT5B)
DRAM Case Temperature Rise from Ambient due to Bank
Interleave Reads with Auto-Precharge (DT7)
Thermal Resistance of PLL Package from Top (Case) to
Ambient (Psi T-A PLL)
Thermal Resistance of Register Package from Top
(Case) to Ambient (Psi T-A Register)
PLL Case Temperature Rise from Ambient due to PLL
Active (DT PLL Active)
Resister Case Temperature Rise from Ambient due to
Register Active/Mode Bit (DT Register Active/Mode Bit)
SPD Reversion
Checksum for Byte 0-62
Manufacturer’s JEDEC ID Code
Module Manufacturing Location
Module Part number
NT1GT64U8HB0BN-37B
NT1GT64U8HB0BN-3C
NT1GT64U8HB0BN-25D
NT1GT64U8HB0BN-25C
Description
(1GBB – 2 Ranks, 64Mx8 DDR2 SDRAMs)
RC
CK
4E5431475436345538484230424E2D33374220
4E5431475436345538484230424E2D33432020
4E5431475436345538484230424E2D32354420
4E5431475436345538484230424E2D32354320
)
)
RFC
)
13
0.30ns 0.24ns
0.40ns 0.34ns
8.11˚C 8.69˚C
4.64˚C 5.8˚C
4.98˚C 5.8˚C
3.25˚C 3.82˚C
Module Part Number in ASCII
12.75
17.39
18.54
-37B
95˚C
0˚C
˚C
˚C
˚C
Manufacturing code
SPD Entry Value
Checksum Data
1.2˚C
15.07
18.54
60ns
95˚C
-3C
˚C
˚C
undefined
NANYA
61˚C/W
0.81˚C
1.04˚C
105ns
8.0ns
N/A
1.2
00
00
00
00
NANYA reserves the right to change products and specifications without notice.
19.7˚C
-25D
17.96˚C
20.28˚C
(Part 2 of 2)
0.20ns
0.30ns
9.74˚C
5.91˚C
6.95˚C
4.52˚C
95˚C
0˚C
57.5ns
-25C
Serial PD Data Entry (Hex.)
-37B
1E
4B
2F
4D
28
50
22
41
40
23
26
7F7F7F0B00000000
© NANYA TECHNOLOGY CORPORATION
-3C
3C
3A
4D
4C
18
22
53
53
27
26
41
7A
2A
69
80
00
37
00
00
00
00
12
--
--
--
-25D
28
43
1E
3C
5B
5C
14
50
63
2F
29
-25C
39
5F
Note
1