nt1gc64bh4b0ps Nanya Techology, nt1gc64bh4b0ps Datasheet

nt1gc64bh4b0ps

Manufacturer Part Number

nt1gc64bh4b0ps

Description

Unbuffered Ddr3 So-dimm

Manufacturer

Nanya Techology

Datasheet

1.NT1GC64BH4B0PS.pdf (25 pages)

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NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS

1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64

PC3-8500 / PC3-10600

Unbuffered DDR3 SO-DIMM

Based on DDR3-1066/1333 128Mx16 (1GB) / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die

Features

•Performance:

DIMM CAS Latency

fck – Clock Freqency

tck – Clock Cycle

fDQ – DQ Burst Freqency

• 204-Pin Small Outline Dual In-Line Memory Module (SO-DIMM)

• 1GB: 128Mx64 Unbuffered DDR3 SO-DIMM based on 128Mx16

• 2GB: 256Mx64 Unbuffered DDR3 SO-DIMM based on 256Mx8

•4GB: 512Mx64 Unbuffered DDR3 SO-DIMM based on 256Mx8

• Intended for 533MHz/667MHz applications

• Inputs and outputs are SSTL-15 compatible

• V

• SDRAMs have 8 internal banks for concurrent operation

• Differential clock inputs

• Data is read or written on both clock edges

• DRAM DLL aligns DQ and DQS transitions with clock transitions.

• Address and control signals are fully synchronous to positive

Description

NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS are un-buffered 204-Pin Double Data Rate 3 (DDR3) Synchronous

DRAM Small Outline Dual In-Line Memory Module (SO-DIMM), organized as one rank of 128Mx64 (1GB) and two ranks of 256Mx64 (2GB)

/ 512Mx64 (4GB) high-speed memory array. Modules use four 128Mx16 (1GB) 96-ball BGA packaged devices and eight 128Mx16 (2GB)

96-ball BGA packaged devices and sixteen 256Mx8 (4GB) 78-ball BGA packaged devices. These DIMMs are manufactured using raw

cards developed for broad industry use as reference designs. The use of these common design files minimizes electrical variation between

suppliers. All NANYA DDR3 SODIMMs provide a high-performance, flexible 8-byte interface in a space-saving footprint.

The DIMM is intended for use in applications operating of 533MHz/667MHz clock speeds and achieves high-speed data transfer rates of

1066Mbps/1333Mbps. Prior to any access operation, the device  latency and burst/length/operation type must be programmed into the

DIMM by address inputs A0-A13 (1GB/2GB)/A0-A14 (4GB) and I/O inputs BA0~BA2 using the mode register set cycle.

The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data

are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.

REV 0.1

01/2010

DDR3 SDRAM B-Die devices.

clock edge

= V

Speed Sort

DDQ

= 1.5V ±0.075V

PC3-8500

1.875

1066

-BE

533

PC3-10600

1333

-CG

667

1.5

Mbps

MHz

Unit

• Programmable Operation:

• Two different termination values (Rtt_Nom & Rtt_WR)

• 14/10/1 (row/column/rank) Addressing for 1GB

• 14/10/2 (row/column/rank) Addressing for 2GB

• 15/10/2 (row/column/rank) Addressing for 4GB

• Extended operating temperature rage

• Auto Self-Refresh option

• Serial Presence Detect

• Gold contacts

• 1GB: SDRAMs are in 96-ball BGA Package

• 2GB: SDRAMs are in 96-ball BGA Package

• 4GB: SDRAMs are in 78-ball BGA Package

• RoHS compliance + Halogen Free

- DIMM  Latency: 6,7,8,9

- Burst Type: Sequential or Interleave

- Burst Length: BC4, BL8

- Operation: Burst Read and Write

NANYA reserves the right to change products and specifications without notice.

Related parts for nt1gc64bh4b0ps

nt1gc64bh4b0ps Summary of contents

Page 1

... Description NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS are un-buffered 204-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Small Outline Dual In-Line Memory Module (SO-DIMM), organized as one rank of 128Mx64 (1GB) and two ranks of 256Mx64 (2GB) / 512Mx64 (4GB) high-speed memory array. Modules use four 128Mx16 (1GB) 96-ball BGA packaged devices and eight 128Mx16 (2GB) 96-ball BGA packaged devices and sixteen 256Mx8 (4GB) 78-ball BGA packaged devices ...

Page 2

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Ordering Information Part Number NT1GC64BH4B0PS-BE DDR3-1066 NT1GC64BH4B0PS-CG DDR3-1333 PC3-10600 NT2GC64B88B0NS-BE DDR3-1066 NT2GC64B88B0NS-CG DDR3-1333 PC3-10600 NT4GC64B8HB0NS-BE DDR3-1066 NT4GC64B8HB0NS-CG DDR3-1333 PC3-10600 Pin Description Pin Name Description ...

Page 3

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM DDR3 SDRAM Pin Assignment Pin Front Pin Back Pin REFDQ DQ4 DQ0 6 DQ5 57 7 DQ1  ...

Page 4

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Input/Output Functional Description Symbol Type Polarity CK0, CK1 Cross Input ,  point Active CKE0, CKE1 Input High Active ,  ...

Page 5

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Functional Block Diagram – [1GB 1 Rank, 128Mx16 DDR3 SDRAMs] DQS0 LDQS ZQ  L DM0 LDM DQ[0:7] DQ[0:7] DQS1 UDQS  ...

Page 6

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Functional Block Diagram – [2GB 1 Rank, 256Mx8 DDR3 SDRAMs] 240ohm +/-1% DQS0 LDQS ZQ  L DM0 LDM DQ[0:7] DQ[0:7] D0 DQS1 UDQS  ...

Page 7

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Functional Block Diagram – [4GB 2 Ranks, 256Mx8 DDR3 SDRAMs] 240ohm +/-1% DQS3 DQS ZQ   DM3 DM DQ[24:31] DQ[0:7] D11 240ohm +/-1% DQS1 DQS ZQ  ...

Page 8

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Serial Presence Detect (Part [1GB – 1 Rank, 64Mx16 DDR3 SDRAMs] Byte Description 0 CRC range, EEPROM bytes, bytes used 1 SPD revision 2 DRAM device type ...

Page 9

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Serial Presence Detect (Part [1GB – 1 Rank, 128Mx16 DDR3 SDRAMs] Byte Description 128-145 Module part number 146 Module die revision 147 Module PCB revision ...

Page 10

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Serial Presence Detect (Part [2GB – 2 Ranks, 128Mx16 DDR3 SDRAMs] Byte Description 0 CRC range, EEPROM bytes, bytes used 1 SPD revision 2 DRAM device type ...

Page 11

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Serial Presence Detect (Part [2GB – 2 Ranks, 128Mx16 DDR3 SDRAMs] Byte Description 128-145 Module part number 146 Module die revision 147 Module PCB revision ...

Page 12

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Serial Presence Detect (Part [4GB – 2 Ranks, 256Mx8 DDR3 SDRAMs] Byte Description 0 CRC range, EEPROM bytes, bytes used 1 SPD revision 2 DRAM device type ...

Page 13

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Serial Presence Detect (Part [4GB – 2 Ranks, 256Mx8 DDR3 SDRAMs] Byte Description 128-145 Module part number 146 Module die revision 147 Module PCB revision ...

Page 14

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Environmental Requirements Symbol Operating Temperature (ambient) T OPR Storage Temperature T STG Note: Stress greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional operation at or above the conditions indicated is not implied ...

Page 15

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Single-Ended AC and DC Input Levels for Command and Address Symbol Parameter VIH.CA(DC) DC Input Logic High VIL.CA(DC) DC Input Logic Low VIH.CA(AC) AC Input Logic High VIL.CA(AC) AC Input Logic Low VIH ...

Page 16

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Operating, Standby, and Refresh Currents = 1.5V ± 0.075V [1GB – 1 Rank, 128Mx16 DDR3 SDRAMs ° ° CASE DDQ DD Symbol Operating One Bank Active-Precharge Current ...

Page 17

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Operating, Standby, and Refresh Currents = 1.5V ± 0.075V [4GB – 2 Ranks, 256Mx8 DDR3 SDRAMs ° ° CASE DDQ DD Symbol Operating One Bank Active-Precharge Current ...

Page 18

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Standard Speed Bins Speed Bin CL – tRCD - tRP Parameter Internal read command to first data ACT to internal read or write delay time PRE command period ACT to ACT or REF command period ...

Page 19

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM AC Timing Specifications for DDR3 SDRAM Devices Used on Module Symbol Parameter Clock Timing tCK(DLL_OF Minimum Clock Cycle Time (DLL off mode) tCK(avg) Average Clock Period(Refer to "Standard Speed ...

Page 20

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Symbol Parameter Command and Address Timing tDLLK DLL Locking time Internal READ command to PRECHARGE tRTP Command delay Delay from start of internal write transaction to tWTR ...

Page 21

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Symbol Parameter Timing of WR command to Power Down entry tWRPDEN (BL8OTF, BL8MRS, BC4OTF) Timing of WRA command to Power Down entry tWRAPDEN (BL8OTF, BL8MRS, BC4OTF) Timing of WR command to Power Down entry ...

Page 22

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Package Dimensions – [1GB 1 Rank, 128Mx16 DDR3 SDRAMs] 2.0 (0.079) 1 21.0 (0.827) 1.5 (0.059) Detail A Units: Millimeters (Inches) Note: Device position and scale are only for reference. ...

Page 23

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Package Dimensions – [2GB 2 Ranks, 256Mx8 DDR3 SDRAMs] 2.0 (0.079) 1 21.0 (0.827) 1.5 (0.059) Detail A Units: Millimeters (Inches) Note: Device position and scale are only for reference. ...

Page 24

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Package Dimensions – [4GB 2 Ranks, 256Mx8 DDR3 SDRAMs] 2.0 (0.079) 1 21.0 (0.827) 1.5 (0.059) Detail A Units: Millimeters (Inches) Note: Device position and scale are only for reference. ...

Page 25

... NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Revision Log Rev Date 0.1 01/2010 Preliminary Release Nanya Technology Corporation Hwa Ya Technology Park 669 Fu Hsing 3rd Rd., Kueishan, Taoyuan, 333, Taiwan, R.O.C. Tel: +886-3-328-1688 Please visit our home page for more information: Printed in Taiwan © ...

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