s29gl128n Meet Spansion Inc., s29gl128n Datasheet - Page 70

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s29gl128n

Manufacturer Part Number
s29gl128n
Description
3.0 Volt-only Page Mode Flash Memory Featuring 110 Nm Mirrorbit ?rocess Technology
Manufacturer
Meet Spansion Inc.
Datasheet

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68
RY/BY#: Ready/Busy#
Notes:
1. VA = Valid address for programming. During a sector erase operation, a valid
2. DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simulta-
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Al-
gorithm is in progress or complete. The RY/ BY# status is valid after the rising edge of the final
WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY#
pins can be tied together in parallel with a pull-up resistor to V
If the output is low (Busy), the device is actively erasing or programming. (This includes pro-
gramming in the Erase Suspend mode.) If the output is high (Ready), the device is in the read
mode, the standby mode, or in the erase-suspend-read mode.
the outputs for RY/BY# .
address is any sector address within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
neously with DQ5.
No
Figure 5. Data# Polling Algorithm
S29GL-N MirrorBit™ Flash Family
Read DQ15–DQ0
Read DQ15–DQ0
DQ7 = Data?
DQ7 = Data?
Addr = VA
Addr = VA
DQ5 = 1
START
FAIL
No
Yes
No
D a t a
Yes
Yes
S h e e t
PASS
CC
T able 16 on page 72
.
S29GL-N_00_B3 October 13, 2006
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