sg2567rdr212452ia ETC-unknow, sg2567rdr212452ia Datasheet - Page 7

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sg2567rdr212452ia

Manufacturer Part Number
sg2567rdr212452ia
Description
Dram Module Ddr2 Sdram 2gbyte 240rdimm
Manufacturer
ETC-unknow
Datasheet
Notes:
1. DM pin of all SDRAM devices is tied to V
2. PAR_IN has a pull-down resistor of 100KΩ.
Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe: 5 Kelvin Park South, Kelvin South, East Kilbride, G75 ORH, United Kingdom • Tel: +44-870-870-8747 • Fax: +44-870-870-8757
Asia/Pacific: Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: +604-3992909 • Fax: +604-3992903
BA0~BA1
A0~A13
PCK7#
ODT0
ODT1
RAS#
CAS#
CKE0
CKE1
PCK7
CS0#
CS1#
WE#
SA0
SA1
SA2
SCL
SDA
22Ω
REG1~REG4
SA0
SA1
SA2
SCL
SDA
EEPROM
SPD
(x4)
R
E
G
S
E
R
S
T
I
SPD1
CK0#
V
WP
CK0
DD
RCS0# to S# on (U2~U19)
RCS1# to S# on (U20~U37)
RA0~RA13 to all devices (U2~U37)
RBA0~RBA1 to all devices (U2~U37)
RRAS# to all devices (U2~U37)
RCAS# to all devices (U2~U37)
RWE# to all devices (U2~U37)
RODT0 to ODT on (U2~U19)
RODT1 to ODT on (U20~U37)
RCKE0 to CKE on (U2~U19)
RCKE1 to CKE on (U20~U37)
RESET#
V
RESET#
DDSPD
120Ω
±5%
120Ω
±5%
CK0
CK0#
OE
FBI
FBI#
SS.
0±80ps
PLL1
0±80ps
PLL
FBO#
FBO
K0#
Kn#
PAR_IN
PAR_IN
K0
Kn
22Ω
V
V
22Ω
V
V
SS
DD
SS
DD
PAR_IN
C0
C1
PAR_IN
C0
C1
SG2567RDR212452UU
V
DD
/V
REG1
REG3
DDSPD
PPO
PPO
SDRAM
SDRAM
SDRAM
SDRAM
Register
Register
Register
Register
/V
REF
V
V
V
V
/V
DD
DD
DD
DD
DDQ
120Ω
120Ω
V
±5%
±5%
SS
PAR_IN
C0
C1
PAR_IN
C0
C1
REG2
REG4
QERR#
QERR#
July 31, 2007
Decoupling
Capacitors
(10μF, 100nF)
ERR_OUT#
ERR_OUT#
7

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