pm75cs1d120 Mitsumi Electronics, Corp., pm75cs1d120 Datasheet - Page 26

• Manufacturer Part Number: pm75cs1d120
• Description: Mitsubishi Ipm L1/s1-series Application Note Igbt Modules
• Manufacturer: Mitsumi Electronics, Corp.

11-2. Function of the IPM
Dead time (tdead)
Drive
Short circuit
Current
Protection
Over
Temperature
Protection
Under-Voltage
Lockout
Protection
Controlled
Shutdown
Fault
Output
In order to prevent arm shoot through a dead time between high and low side input ON signals is required to be
included in the system control logic. The tdead measured directly on the IPM input terminals
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
Function
IPM’ input signal V
IPM’ input signal V
(Upper Arm)
(Lower Arm)
Symbol
SC
OT
UV
F
-
-
0 V
O
0 V
· Off-level input signal (V
· IPM monitors forward collector current of each IGBT by current sensor built in IGBT
· In case that an IGBT on lower arm have short-circuit, IPM turn off all lower IGBTs
· IPM submits fault output if IGBT has short-circuit. The fault signal is output for the
· If there is no more short-circuit state while the input signal (V
· IPM monitors each IGBT chip surface temperature. If the temperature exceeds SC
· IPM identified to be in over temperature state when the base plate temperature
· IPM submits and holds on fault output of over temperature when OT trip level is
· If there is no more over temperature state with IGBT while the input signal (V
· IPM monitors control power supply voltage of each arm. If the control power supply
· In case of lower arm’s UV operation, IPM turns off all lower arm’s IGBTs (U
· IPM identified to be in under voltage state when the control power supply voltage
· IPM submits and holds on fault output of under voltage after t
· If there is no more under voltage state with IGBT while the input signal (V
· In all case of protective turn off operation, IPM reduces the IGBT’s gate voltage
· Fo terminal conducts to VNC terminal over 1ms when SC,OT or UV protection of
CIN
CIN
chip. If the current exceeds SC trip level, IPM identifies it as short circuit and off the
IGBT performing soft shutdown.
(U
duration of t
halfway.
resets itself from the short-circuit protection condition with the falling edge of the next
input signal, and then the IGBT switching operation resets.
trip level, IPM identifies it as short circuit and off the IGBT performing soft shutdown.
exceeds OT lever until it drops OT reset level.
exceeded and until the temperature falls to OT reset level.
off level, IPM reset itself from the over temperature protection with the falling edge of
the next input signal, and then the IGBT switching operation restarts.
exceeds UV trip level and continues with it for a certain duration, IPM turns off IGBT,
performing soft shutdown as long as the under voltage condition lasts.
and B), performing soft shutdown.
drops UV trip level until it goes up to UV reset level.
returns to UV reset level.
off level, IPM reset itself from the under voltage protection with the falling edge of
the next input signal, and then the IGBT switching operation restarts.
gradually to final off level in order to reduce the turn-off surge voltage at large
current-off.
lower arm is enabled. A resistor (1.5k) is connected inside IPM in series.
and on-level input signal (V
N
,V
N
2V
,W
N
and Br) performing controlled shutdown.
FO
t
dead
1.5V
when IPM detecting a short circuit state, reduces the gate voltage to
26
CIN
>V
CIN
CIN(off)
<V
2V
t
) drives IGBT off,
Description
CIN(on)
dead
1.5V
) drives IGBT on.
2V
t
dead
1.5V
CIN
Using IPM
dUV
) is at off level, IPM
until supply voltage
Sep. 2008
CIN
N
, V
) is at
CIN
t
t
N
) is at
, W
N