pm75cs1d120 Mitsumi Electronics, Corp., pm75cs1d120 Datasheet - Page 39

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pm75cs1d120

Manufacturer Part Number
pm75cs1d120
Description
Mitsubishi Ipm L1/s1-series Application Note Igbt Modules
Manufacturer
Mitsumi Electronics, Corp.
Datasheet

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ID
(mA )
DC
The circuit current of control power supply of IPM increases with the carrier frequency.
The carrier frequency dependence of the circuit current of the IPM control power supply can be approximated
as a straight line like the following figure.
The gate of IGBT used in IPM has an input-capacitance (Cies =C
The current to be charge and discharged by flowing through the gate at the timing of gate on and off.
There is IPM that this current becomes 1~2 A.
When IPM is turn-off, the dv/dt current from the collector of IGBT flows into the side of the control power supply.
Design a control power supply in the low impedance so that this dv/dt current can be absorbed. Otherwise, The
control IC of IPM might make malfunction and On signal is activated by this current resulting arm short circuit.
The control power supply circuit needs a capacity that it can supply and absorb these current.
Usually, such problems (maximum current, impedance) can be avoided by power supply circuit and also
bypass, smoothing condenser. But, the effect of the condenser is influenced by the inductance of the wiring
pattern. Determine the condenser capacity after verifying the substrate and the equipment.
10
Max
Carrier frequency
Typ
(kHz)
20
Control
power supply
current
Gate
current
Control
input signal
(Low-ON)
0A
0A
39
GE
+C
CG
).
IN
VCC
GND
Using IPM
IPM
C
GE
Sep. 2008
IGBT

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