mc68hc908sr12 Freescale Semiconductor, Inc, mc68hc908sr12 Datasheet - Page 386

• Manufacturer Part Number: mc68hc908sr12
• Description: M68hc08 Microcontrollers Microcontroller
• Manufacturer: Freescale Semiconductor, Inc

Electrical Specifications
24.18 FLASH Memory Characteristics
Data Sheet
386
Notes:
Data retention voltage
Number of rows per page
Number of bytes per page
Read bus clock frequency
Page erase time
Mass erase time
PGM/ERASE to HVEN setup time
High-voltage hold time
High-voltage hold time (mass erase)
Program hold time
Program time
Address/data setup time
Address/data hold time
Recovery time
Cumulative HV period
Row erase endurance
Row program endurance
Data retention time
1. f
2. If the page erase time is longer than t
3. If the mass erase time is longer than t
4. It is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing
5. t
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum time
memory.
memory.
HVEN to logic 0.
programmed twice before next erase.
erase/program cycles.
erase/program cycle.
specified.
Read
hv
is the cumulative high voltage programming time to the same row before next erase, and the same address can not be
is defined as the frequency range for which the FLASH memory can be read.
(8)
Table 24-17. FLASH Memory Electrical Characteristics
Characteristic
(6)
(7)
MErase
Erase
(Min.), there is no erase-disturb, but it reduces the endurance of the FLASH
(Min.), there is no erase-disturb, but is reduces the endurance of the FLASH
Electrical Specifications
t
Symbol
MErase
t
f
Erase
Read
V
t
t
t
t
rcv
t
t
t
t
hv
MC68HC908SR12•MC68HC08SR12 — Rev. 5.0
t
Prog
nvhl
RDR
pgs
ads
adh
nvs
nvh
—
—
—
(5)
(4)
(1)
(2)
(3)
Min.
100
10k
10k
32k
1.3
10
30
10
—
—
—
1
4
5
5
1
128
2
Freescale Semiconductor
Max.
8M
40
30
30
—
—
—
—
—
—
—
—
—
—
—
25
Cycles
Cycles
Rows
Bytes
Years
Unit
ms
ms
ms
Hz
µs
µs
µs
µs
µs
µs
ns
ns
V